The manufacturer expects that new technologies will help reduce the energy consumption of equipment
Samsung has begun production of a trial batch of 3-nanometer chips compatible with mining devices – application-specific integrated circuits (ASICs), South Korean media reported , citing sources.
New chips will be created using GAA (Gate-All-Around) technology: in this production, transistors get an unusual shape. Samsung said this should result in a 45% reduction in chip size, a 30% increase in efficiency, and a 50% reduction in power consumption.
When compared to traditional GAA with nanowires, the business claims this enables more precise current regulation.
In comparison to its 5nm process, Samsung’s Gen 1 3nm GAA method, according to the company, uses 45% less energy, performs 23% better, and occupies 16% less space.
The Gen 2 3nm GAA process that is currently being developed will use 50% less energy, perform 30% better, and use 35% less space.
According to the publication, the first customer was a Chinese manufacturer of equipment for mining cryptocurrencies. US-based Qualcomm, a major Samsung customer, has also reserved new devices, the article says.
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